IGBT is a high-voltage, high-current power semiconductor device that is often used in high-power applications such as electric vehicles, industrial motor drives, UPS, etc. Before understanding the IGBT chip, IGBT single tube, IGBT module and IGBT device, let's first understand the basic working principle and application characteristics of IGBT.

1. Working principle of IGBT

The IGBT is a transistor structure in which a MOSFET (metal oxide semiconductor field-effect transistor) controls the switching action of a Bipolar transistor. The IGBT consists of three main parts:

-N-type channel region: This is the region formed by the N-type epitaxial layer and channel in the P-type substrate, which is responsible for conducting electricity.

P-type channel zone: This is the area formed by the P-type epitaxial layer and channel in the N-type substrate, responsible for isolation.

- Type P saturation region: This is the region consisting of a type P substrate and a type P epitaxial layer, which is responsible for current amplification.

The working principle of the IGBT can be simply described as follows: when the control input signal is applied to the gate of the IGBT, the voltage between the gate and the source controls the resistance in the channel region and the voltage in the P-type saturation region, thus controlling the flow of current. When the grid voltage is positive, the channel area will be switched on. When the grid voltage is negative, the channel region will be truncated. Igbts are primarily used in amplifiers for switching/processing complex waveforms via pulse width modulation (PWM). In a word: working principle: by controlling the input voltage and current, to rectify and adjust the size and direction of the output voltage and current, with high efficiency, energy saving, reliable and other advantages.

IGBT core manufacturing process

2. IGBT chip

IGBT chip refers to the core part of IGBT device, which includes N-type channel region, P-type channel region and P-type saturation region. IGBT chip is responsible for realizing power switching function by controlling current conduction and truncation through gate.

Development trend diagram of power device and module package form

3. IGBT single tube

IGBT single tube usually refers to a device that contains only one IGBT chip, which is the most basic form of IGBT package. IGBT single tube through the package, the chip pin and the external circuit are connected to achieve the current control and voltage resistance function.

Packaging process flow

The IGBT single tube is an N-channel reinforced insulated gate bipolar transistor structure, the N+ region is called the source region, and the electrodes connected to it are called the source region. The P+ region is called the drain region. The control region of the device is the grid region, and the electrodes connected to it are called the grid. The channel is formed close to the border of the neighboring fence. The P-shaped region between the drain and the source (where the channel is formed), including the P+ and P regions, is called the subchannel region. The p+ region on the other side of the drain region is called the drain injection region, which is a unique functional region of IGBT, the drain region and the sub-channel region together form a PNP bipolar transistor, which acts as an emitter, injects holes into the drain, conducts modulation, and reduces the on-voltage of the device. The electrode connected to the drain injection area is called the drain. With the development of science and technology and the expansion of application scenarios, IGBT single-tube dual-chip is also the future development trend

4. IGBT module

Introduction to IGBT package structure

Introduction to IGBT package structure

IGBT module multi-layer structure diagram

IGBT module packaging process flow
Chip and DBC welded bond wire a DCB and copper base plate welded a mounting housing a poured silicone a seal a final test

IGBT insulated gate bipolar transistor is a composite full-controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect tube), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The saturation voltage of GTR is lower, the current carrying density is higher, but the driving current is larger. MOSFET drive power is small, the switching speed is fast, but the on-voltage drop is large, the current carrying density is small. IGBT combines the advantages of the above two devices, and the driving power is small and the saturation voltage is reduced. IGBT module is the integration of multiple GBT single tubes and other auxiliary components (such as drive circuits, heat sinks) in a module.
The main advantages of IGBT modules are higher power capacity and better heat dissipation performance. In general, IGBT modules are packaged in a larger form and are suitable for high power applications.

Among them, we must pay attention to the interconnection and welding materials, which are related to the life and reliability of the module;

5. IGBT devices

IGBT devices generally refer to all electronic devices containing IGBT chips, which can be single tubes, modules or other forms. In most cases, the 1GBT chip refers to the specific control element, and the IGBT device is a general term for all types of IGBT single tubes, modules and their variants. Refers to the entire IGBT product including chips, packages and modules. It is a complete power switching device, can control the current flow through the appropriate drive circuit, 1GBT device in the design and application need to consider the current bearing capacity, switching speed, on-voltage drop and other key parameters.

In SUMMARY:

- The IGBT chip is the core part of the IGBT device and is responsible for the power switching function.

-1GBT single tube refers to the device that contains only one IGBT chip, which is the most basic package form.

The IGBT module integrates multiple IGBT single tubes and other auxiliary components together for higher power capacity and heat dissipation performance.

The 1GBT device is a general term for all types of 1G8T single tubes, cross blocks and their variants. These are the main differences between IGBT chips, 1GBT single tubes, IGBT modules and IGBT devices. Understanding these concepts helps us to select the right IGBT solution for different applications and to understand its performance and characteristics

Let's look at how to measure it:

Static measurement method: A multimeter is used to measure the characteristics of the secondary tube between the collector (C) and the emitter (E).

Dynamic measurement method: An on-voltage is given to the gate (G) to measure the on-state between the collector (C) and the emitter (E).

In the end, INFINITE believes that IGBT(insulated gate bipolar transistor) as a new type of power semiconductor device, its essence is a kind of gate control technology, Xiaobian now understands that gate technology is also used in other fields, such as sensors, wireless communication, energy conversion, etc. At present, IGBT gate technology has played a pivotal role in the field of power electronics technology, and has been widely used in new energy, new energy vehicles, motor energy saving, rail transit, smart grid, aerospace, household appliances, automotive electronics, frequency conversion energy saving, intelligent equipment, Marine weapons, UHV, low altitude economy and other fields.